General Purpose and Low VCE(sat) Transistors | MSB92

高電圧 PNP バイポーラ・トランジスタ

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この高電圧 PNP バイポーラ・トランジスタは、汎用アンプ・アプリケーション向けに設計されています。低電力表面実装アプリケーション向けに設計された SC-59 パッケージで提供されます。

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MSB92T1G

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CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

N

PNP

General Purpose

0.5

0.15

300

300

5

0.9

-

25

-

50

0.15

$0.0191

More Details

NSVMSB92T1G

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Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

N

PNP

General Purpose

0.5

0.15

300

300

5

0.9

-

25

-

50

0.15

$0.0792

More Details

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信頼性データ

Die Related Summary Data

Device: MSB92T1G

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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