General Purpose and Low VCE(sat) Transistors | MSD42SW

高電圧 NPN バイポーラ・トランジスタ

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Overview

この高電圧 NPN バイポーラ・トランジスタは汎用アンプ・アプリケーション向けに設計されています。低電力表面実装アプリケーション向けに設計された SC-70/SOT-323 パッケージで提供されます。

  • Pb-Free Package is Available

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

MSD42SWT1

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Obsolete

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CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

419-04

1

235

REEL

3000

N

NPN

General Purpose

0.5

0.15

300

-

-

-

-

25

200

-

0.15

Price N/A

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MSD42SWT1G

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CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

419-04

1

260

REEL

3000

N

NPN

General Purpose

0.5

0.15

300

300

6

-

-

25

200

-

0.15

$0.0276

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信頼性データ

Die Related Summary Data

Device: MSD42SWT1G

Equivalent to wafer fab process: SST

製品技術

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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