General Purpose and Low VCE(sat) Transistors | NJW44H11

NPN パワー・バイポーラ・トランジスタ、80 V、10 A

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Overview

このプラスチック、シリコン NPN パワー・バイポーラ・トランジスタは、スイッチング・レギュレータ、コンバータ、パワーアンプのようなアプリケーションにおいて、出力ステージやドライバステージなどの汎用パワーアンプやスイッチングとして使用できます。

  • High-fidelity consumer and professional audio products
  • Professional audio amplifiers
  • Aftermarket automotive amplifiers
  • Fast switching speeds
  • High freguency response
  • High amplifier bandwidth
  • Packaged in TO-3P
  • PbFree, Halogen Free/BFR Free and is RoHS Compliant

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MSL Temp (°C)

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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NJW44H11G

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CAD Model

Pb

A

H

P

TO-3P-3

340AB

NA

0

TUBE

30

Yes

NPN

General Purpose

1

10

80

-

5

-

1.5

100

320

85

120

15.60 x 19.90 x 4.80

$1.3025

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信頼性データ

Die Related Summary Data

Device: NJW44H11G

Equivalent to wafer fab process: BPT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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