General Purpose and Low VCE(sat) Transistors | NJW44H11

NPN パワー・バイポーラ・トランジスタ、80 V、10 A

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Overview

このプラスチック、シリコン NPN パワー・バイポーラ・トランジスタは、スイッチング・レギュレータ、コンバータ、パワーアンプのようなアプリケーションにおいて、出力ステージやドライバステージなどの汎用パワーアンプやスイッチングとして使用できます。

  • High-fidelity consumer and professional audio products

  • Professional audio amplifiers
  • Aftermarket automotive amplifiers

  • Fast switching speeds
  • High freguency response
  • High amplifier bandwidth
  • Packaged in TO-3P
  • PbFree, Halogen Free/BFR Free and is RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NJW44H11G

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Active

CAD Model

Pb

A

H

P

TO-3P-3

340AB

NA

0

TUBE

30

Y

NPN

General Purpose

1

10

80

-

5

-

1.5

100

320

85

120

$1.3025

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信頼性データ

Die Related Summary Data

Device: NJW44H11G

Equivalent to wafer fab process: BPT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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