General Purpose and Low VCE(sat) Transistors | NSS20500UW3

低 VCE(sat) トランジスタ、PNP、-20 V、7.0 A

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Overview

低 VCE(sat) バイポーラ・トランジスタは、超低飽和電圧 VCE(sat) および高電流ゲイン機能を備えた小型の表面実装デバイスです。これらは、手頃な価格の効率的なエネルギー制御が重要な、低電圧、高速スイッチング・アプリケーション向けに設計されています。

  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NSS20500UW3T2G

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Active

CAD Model

Pb

A

H

P

WDFN-3

506AU

1

260

REEL

3000

Y

PNP

Low VCE(sat)

0.26

5

20

20

7

0.9

0.9

250

-

100

1.5

$0.1699

More Details

NSS20500UW3TBG

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Active

CAD Model

Pb

A

H

P

WDFN-3

506AU

1

260

REEL

3000

Y

PNP

Low VCE(sat)

0.26

5

20

20

7

0.9

0.9

250

-

100

1.5

$0.1699

More Details

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信頼性データ

Die Related Summary Data

Device: NSS20500UW3T2G

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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