General Purpose and Low VCE(sat) Transistors | NSS40200UW6T1G

低 VCE(sat) トランジスタ、PNP、-40 V、2.0 A

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Overview

低 VCE(sat) バイポーラ・トランジスタは、超低飽和電圧 VCE(sat) および高電流ゲイン機能を備えた小型の表面実装デバイスです。これらは、手頃な価格の効率的なエネルギー制御が重要な、低電圧、高速スイッチング・アプリケーションで使用するために設計されています。

  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays

  • High Current, VCE(sat), ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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NSS40200UW6T1G

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Obsolete

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CAD Model

Pb

A

H

P

WDFN-6

506AP

1

260

REEL

3000

N

PNP

Low VCE(sat)

0.12

2

40

40

7

0.9

0.9

150

-

140

1.5

Price N/A

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NSV40200UW6T1G

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Active

CAD Model

Pb

A

H

P

WDFN-6

506AP

1

260

REEL

3000

Y

PNP

Low VCE(sat)

0.12

2

40

40

7

0.9

0.9

150

-

140

1.5

$0.3009

More Details

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信頼性データ

Die Related Summary Data

Device: NSS40200UW6T1G

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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