General Purpose and Low VCE(sat) Transistors | NST3906DP6

デュアル PNP バイポーラ・トランジスタ

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Overview

このデュアル PNP バイポーラ・トランジスタは、当社の定評ある SOT 23、SOT323、SOT563 3 リード・デバイスのスピンオフです。汎用アンプ・アプリケーション向けに設計されており、SOT963 6 リード表面実装パッケージに収められています。2 つの別々のデバイスが 1 つにパッケージされており、基板スペースの節約が重要な低電力表面実装アプリケーションに最適です。

  • PNP General Purpose Switching Transistor

  • hFE, 100-300
  • Low VCE(sat), <0.4 V
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • This is a Pb-Free Device

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Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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NST3906DP6T5G

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Pb

A

H

P

SOT-963

527AD

1

260

REEL

8000

N

Dual PNP

General Purpose

0.4

0.2

40

40

5

0.95

-

100

300

250

0.42

$0.0427

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信頼性データ

Die Related Summary Data

Device: NST3906DP6T5G

Equivalent to wafer fab process: SST

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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