General Purpose and Low VCE(sat) Transistors | NST65010M

デュアル整合 PNP XSTR 65V

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Overview

これらのトランジスタは、ポータブル製品に最適な超小型 SOT−363 パッケージに収められています。すべてのパラメータで高度に一致するデバイスのペアができるように組み立てられているため、高価な調整が必要なくなります。アプリケーションは、カレント・ミラー、差動センスおよび平衡増幅器、ミキサー、検出器、リミッターなどです。

  • Current Gain Matching to 10%
  • Base−Emitter Voltage Matched to ≤ 2 mV
  • Drop−In Replacement for Standard Device
  • NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC−Q101Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NST65010MW6T1G

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

Y

Dual PNP

General Purpose

0.65

0.1

65

80

5

0.9

0.82

220

475

100

0.38

$0.052

More Details

NSVT65010MW6T1G

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Active

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419B-02

1

260

REEL

3000

Y

Dual PNP

General Purpose

0.65

0.1

65

80

5

0.9

0.82

220

475

100

0.38

$0.0587

More Details

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信頼性データ

Die Related Summary Data

Device: NST65010MW6T1G

Equivalent to wafer fab process: SST

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製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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