General Purpose and Low VCE(sat) Transistors | NST847BPDP6T5G

45 V、100 mA NPN PNP バイポーラ・トランジスタ

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Overview

この NPN PNP バイポーラ・トランジスタは、当社の定評ある SOT23/SOT323/SOT563 3 リード・デバイスのスピンオフです。汎用アンプ・アプリケーション向けに設計されており、SOT963 6 リード表面実装パッケージに収められています。2 つの別々のデバイスが 1 つにパッケージされており、基板スペースの節約が重要な低電力表面実装アプリケーションに最適です。

  • Complementary General Purpose Transistors

  • hFE 200-450
  • Low VCE(sat), <0.3 V
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • This is a Pb-Free Device

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NST847BPDP6T5G

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Active

CAD Model

Pb

A

H

P

SOT-963

527AD

1

260

REEL

8000

N

Complementary

General Purpose

0.6 (NPN) 0.7 (PNP)

0.1

45

50

6

0.9

0.77

200

450

100

0.42

$0.0427

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Die Related Summary Data

Device: NST847BPDP6T5G

Equivalent to wafer fab process: SST

製品技術

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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