General Purpose and Low VCE(sat) Transistors | NSVT1418L

バイポーラ・トランジスタ、160V、-1A、低 VCE(sat)、PNP シングル

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Overview

このデバイスは、高電流、低飽和電圧、高速スイッチングを備えたバイポーラ・ジャンクション・トランジスタです。車載アプリケーションに適しています。AEC-Q101 基準を満たし、PPAP に対応しています。

  • Load Switch
  • Lighting
  • Infotainment

  • Automotive Electronic Control Units
  • Automotive Telematics

  • Large Current Capacitance
  • Low Collector to Emitter Saturation Voltage
  • High Speed Switching
  • High Allowable Power Dissipation
  • AEC-Q101 Qualified and PPAP Capable

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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NSVT1418LT1G

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CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

Y

PNP

Low VCE(sat)

0.13

1

160

180

6

1.2

~NA~

100

400

~NA~

0.42

$0.1725

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Die Related Summary Data

Device: NSVT1418LT1G

Equivalent to wafer fab process: SSD

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SSD

0

6889897810

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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