General Purpose and Low VCE(sat) Transistors | NZT751

PNP 電流ドライブトランジスター

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Overview

PNP電流ドライバートランジスター、このデバイスは、速度が重要なパワーアンプ、レギュレーター、スイッチング回路のために設計されています。 プロセス5Pから供給

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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NZT751

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Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

N

PNP

General Purpose

0.5

4

60

80

5

1.2

1

40

-

75

1.2

Price N/A

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Die Related Summary Data

Device: NZT751

Equivalent to wafer fab process: SST

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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