General Purpose and Low VCE(sat) Transistors | PZT3906T

200 mA 40 V PNP Bipolar Juncitin Transistor

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Overview

200 mA 40 V PNP Bipolar Juncitin Transistor package in SOT-223

  • General Purpose

  • General Purpose

  • These Devices are Pb-Free, Halogen Free/BFR Free

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

PZT3906T1G

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

0.0318

1

260

REEL

1000

N

PNP

General Purpose

0.25

0.2

40

40

5

0.85

~NA~

100

300

250

1.5

Price N/A

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信頼性データ

Die Related Summary Data

Device: PZT3906T1G

Equivalent to wafer fab process: SST

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等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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