General Purpose and Low VCE(sat) Transistors | PZT651

NPN バイポーラ・トランジスタ

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Overview

この NPN バイポーラ・トランジスタは産業および消費者アプリケーション向けに設計されています。このデバイスは、中電力の表面実装アプリケーション向けに設計された SOT-223 パッケージに収められています。

  • High Current: 2.0 Amp
  • The SOT-223 package can be soldered using wave or reflow.
  • SOT-223 package ensures level mounting, resulting in improved thermalconduction, and allows visual inspection of soldered joints. The formedleads absorb thermal stress during soldering, eliminating the possibilityof damage to the die.
  • PNP Complement is PZT751T1
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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PZT651T1

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Obsolete

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Pb

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PZT651T1G

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CAD Model

Pb

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SOT-223-4 / TO-261-4D

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SPZT651T1G

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4D

0.0318

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Die Related Summary Data

Device: PZT651T1G

Equivalent to wafer fab process: SST

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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