General Purpose and Low VCE(sat) Transistors | TIP115

PNP エピタキシャルシリコン ダーリントントランジスター

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  • ă�“ă�®čŁ˝ĺ“�ă�Żĺ¤šć§�ă�Şç”¨é€”ă�«é�©ă�—ă�źć±Žç”¨ĺ“�ă�§ă�™ă€‚
  • 内蔵ベースエミッター間シャント抵抗器付きのモノリシック構造
  • 高DC電流利得: hFE=1000 @ VCE= -4 V、IC= -1 A (最小)
  • 低いコレクタ -エミッター間飽和電圧
  • 産業用途
  • TIP110/111/112を補完

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