General Purpose and Low VCE(sat) Transistors | TIP49

NPN シリコントランジスター

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Overview

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  • 高持続電圧: VCEO(sus)=250-400 V
  • 1A 定格コレクター電流
  • 高電圧およびスイッチング用途

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

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PTM Max (W)

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TIP49

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

BLKBG

1200

No

NPN

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1

1

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1.5

30

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40

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信頼性データ

Die Related Summary Data

Device: TIP49

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

22

2464763921

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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