General Purpose and Low VCE(sat) Transistors | TIP49

NPN シリコントランジスター

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  • 高持続電圧: VCEO(sus)=250-400 V
  • 1A 定格コレクター電流
  • 高電圧およびスイッチング用途

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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TIP49

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Obsolete

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Pb

A

H

P

TO-220-3

340AT

NA

0

BLKBG

1200

N

NPN

General Purpose

1

1

350

450

5

-

1.5

30

150

10

40

Price N/A

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信頼性データ

Die Related Summary Data

Device: TIP49

Equivalent to wafer fab process: TM

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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