IGBT - 650 V FS4 standalone IGBT

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Overview

Using the novel field stop 4th generation IGBT technology AFGHL75T65SQoffers the optimum performance with both low conduction andswitching losses for high efficiency operations in various applications,especially totem pole bridgeless PFC and Inverter

  • Totem pole bridgeless PFC
  • On Board chargers
  • HV DC-DC converters
  • Hybrid Electric Vehicles
  • Battery electric vehicles
  • AEC-Q101 qualified
  • Tight parameter distribution and Positive temperature co-efficient
  • Fast switching IGBT

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

AFGHL75T65SQ

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Active

CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

Y

-

650

75

1.6

~NA~

0.21

0.61

~NA~

~NA~

139

~NA~

~NA~

375

No

$2.4147

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