IGBTs | AFGH75T65SQ

IGBT - 650 V FS4 standalone IGBT

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Overview

Using the novel field stop 4th generation IGBT technology AFGHL75T65SQoffers the optimum performance with both low conduction andswitching losses for high efficiency operations in various applications,especially totem pole bridgeless PFC and Inverter

  • Totem pole bridgeless PFC
  • On Board chargers
  • HV DC-DC converters

  • Hybrid Electric Vehicles
  • Battery electric vehicles

  • AEC-Q101 qualified
  • Tight parameter distribution and Positive temperature co-efficient
  • Fast switching IGBT

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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AFGHL75T65SQ

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CAD Model

Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

Y

-

650

75

1.6

~NA~

0.21

0.61

~NA~

~NA~

139

~NA~

~NA~

375

No

$2.4147

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信頼性データ

Die Related Summary Data

Device: AFGHL75T65SQ

Equivalent to wafer fab process: IGBT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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