IGBTs | AFGHL40T120RLD

IGBT - Automotive Grade 1200 V 40 A

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Overview

AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.

  • HEV-EV PTC heater
  • HEV-EV e-compressor
  • HEV-EV on board charger

  • Electric vehicles
  • Hybrid electric vehicles

  • AEC Q101 qualified
  • Tight Parameter distribution
  • Low Vcesat
  • Low Eoff & Eon

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Case Outline

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MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

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AFGHL40T120RLD

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CAD Model

Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

F

-

1200

40

1.75

1.51

1.2

3.4

195

0

395

9

0

264

Yes

Price N/A

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信頼性データ

Die Related Summary Data

Device: AFGHL40T120RLD

Equivalent to wafer fab process: TRENCH IGBT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

TRENCH IGBT

0

8782900981

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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