IGBTs | AFGHL50T65SQ

AEC 101 Qualified, 650V, 50A Fieldstop 4 trench IGBT, Stand alone IGBT without co-packed diode

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Overview

Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application.

  • PFC
  • Hard Switching
  • Automotive

  • xEV On & Off board charger
  • xEV PTC

  • AEC Q101 qualified
  • Maximum Junction Temperature, Tj=175°C
  • Very low switching and conduction losses
  • Positive temperature co-efficient
  • Tight parameter distribution
  • Fast Switching
  • Low Saturation Voltage: Vcesat=1.6V(Typ.)@Ic=75A
  • 100% of the parts are tested for ILM

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Case Outline

MSL Type

MSL Temp (°C)

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ON Target

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

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EAS Typ (mJ)

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Co-Packaged Diode

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AFGHL50T65SQ

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Active

CAD Model

Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

Y

-

650

50

1.6

~NA~

0.045

0.18

~NA~

~NA~

99

~NA~

~NA~

268

No

$1.8763

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Die Related Summary Data

Device: AFGHL50T65SQ

Equivalent to wafer fab process: IGBT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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