AFGHL75T65SQDC: IGBT with SiC copack diode

Datasheet: IGBT – Hybrid, Field Stop, Trench 650 V, 75 A, TO247
Rev. 1 (237kB)
製品概要
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製品変更通知
Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and Inverter
特長   利点
     
  • SiC schottky co-pack diode
 
  • zero diode recovery losses
  • Fast switching IGBT
 
  • Low Eon and Eoff losses
  • AEC-Q101 qualified
 
  • automotive compatible
  • Tight parameter distribution and Positive temperature co-efficient
 
  • easy paralelleing
アプリケーション   最終製品
  • Totem pole bridgeless PFC
  • On Board chargers
  • HV DC-DC converters
 
  • Hybrid Electric Vehicles
  • Battery electric vehicles
Availability & Samples
Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
AFGHL75T65SQDC Active
AEC Qualified
PPAP Capable
Pb-free
AFGHL75T65SQDC, IGBT - Hybrid IGBT 650 V TO-247-3LD 340CX NA Tube 450 $3.8266
マーケットリードタイム(週) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
AFGHL75T65SQDC  
 $3.8266 
Pb
A
P
 Active   
650
75
1.6
1.45
0.24
0.48
139
375
Yes
TO-247-3LD
Case Outline
340CX   
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