IGBTs | FGA50N100BNTD

IGBT、1000V、NPT トレンチ

Obsolete

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Overview

1000V NPT IGBT は、当社独自のトレンチ設計と高度な NPT 技術を使用しており、優れた伝導性能とスイッチング性能、高いアバランシェ耐性、容易な並列動作を実現します。このデバイスは、UPS、溶接機、誘導加熱、および電子レンジのようなハード・スイッチング・アプリケーションに最適な性能を発揮します。

  • 無停電電源装置
  • その他の産業用

  • 高速スイッチング
  • 低飽和電圧: VCE(sat) = 2.5V @ IC = 60A
  • 高入力インピーダンス

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGA50N100BNTDTU

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1000

35

2.5

1.2

-

-

1.2

-

275

-

-

156

Yes

Price N/A

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信頼性データ

Die Related Summary Data

Device: FGA50N100BNTDTU

Equivalent to wafer fab process: 3B,IK

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

3B,IK

0

831217026

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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