IGBTs | FGA6560WDF

IGBT、650 V、60 Aフィールドストップ・トレンチ

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Overview

当社の新シリーズのフィールドストップ第3世代IGBTは、新しいフィールドストップIGBT技術を用いて、低い伝導損失およびスイッチング損失が必要不可欠な溶接機のアプリケーションに最適な性能を提供します。

  • 最大ジャンクション温度： TJ =175°C
  • 簡単な並列操作のための正の温度係数
  • 高電流能力
  • 低飽和電圧: VCE(sat) =1.8 V（通常） @ IC = 60 A
  • 部品の100%がILM(1)テスト済み
  • 高入力インピーダンス
  • 高速スイッチング
  • RoHS 対応

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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FGA6560WDF

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Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

650

60

1.8

1.8

0.52

2.46

271

-

84

-

-

306

Yes

Price N/A

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信頼性データ

Die Related Summary Data

Device: FGA6560WDF

Equivalent to wafer fab process: 3B,IJ

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等価デバイス時間

MTBF/MTTF (時間)

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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