IGBTs | FGAF40S65AQ

IGBT、650 V、40 A フィールドストップ・トレンチ

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Overview

オン・セミコンダクターの新シリーズのフィールドストップ第 4 世代 IGBT は、新しいフィールドストップ IGBT 技術を用いて、消費者および産業用アプリケーションのコンバータ PFC ステージに適した性能を発揮します。

  • Consumer Appliances
  • PFC, Welder
  • Industrial application
  • Maximum junction temperature : TJ = 175°C
  • Positive temperaure co-efficient for easy parallel operating
  • High current capability
  • Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
  • High input impedance
  • 100% of the Parts tested for ILM
  • Fast switching
  • Tightened parameter distribution
  • RoHS compliant
  • IGBT with monolithic reverse conducting diode

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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FGAF40S65AQ

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CAD Model

Pb

A

H

P

TO-3PF-3L

340AH

NA

0

TUBE

30

Yes

-

650

40

1.6

1.2

0.062

0.132

274

-

75

-

-

94

No

$1.2088

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信頼性データ

Die Related Summary Data

Device: FGAF40S65AQ

Equivalent to wafer fab process: IGBT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

IGBT

3

4562573939

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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