IGBTs | FGH40T120SQDNL4

IGBT、ウルトラ・フィールドストップ

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この絶縁ゲート・バイポーラ・トランジスタ (IGBT) は堅牢で費用効率が高いウルトラ・フィールドストップ・トレンチ構造が特長であり、要求の厳しいスイッチング・アプリケーションで優れた性能を発揮、低オン抵抗電圧も最小スイッチング損失も実現します。この IGBT は UPS と太陽光発電のアプリケーションに最適です。低フォワード電圧のソフトで高速な共パッケージ型フリーホイール・ダイオードが内蔵されています。

  • Solar inverterUPSWelding

  • Extremely Efficient Trench with Field Stop Technology• TJmax = 175°C• Soft Fast Reverse Recovery Diode• Optimized for High Speed Switching• These are Pb−Free Devices

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Case Outline

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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Eon Typ (mJ)

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Irr Typ (A)

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FGH40T120SQDNL4

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Active

CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

Y

FS7

1200

40

1.78

3.4

1.1

2.7

166

9

221

0

-

227

Yes

$4.9141

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信頼性データ

Die Related Summary Data

Device: FGH40T120SQDNL4

Equivalent to wafer fab process: IGN IGBT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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