IGBTs | FGH50N3

IGBT、300V、SMPS

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Overview

この IGBT は、フェアチャイルドのプレーナ技術を使用して、高周波で動作するため低伝導損失が不可欠な高電圧スイッチング・アプリケーションの多くに最適です。このデバイスは、中周波スイッチ・モード電源用に最適化されています。

  • その他の産業用

  • 低飽和電圧: VCE(sat) = 1.4V 最大
  • 低 EOFF = 6.6µJ/A
  • SCWT = 8µs@ = 125°C
  • 300V スイッチングSOA能力
  • 50A以上での正温度係

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Irr Typ (A)

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FGH50N3

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Last Shipments

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

300

75

1.3

-

0.92

0.13

-

-

180

8

800

463

No

Price N/A

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Die Related Summary Data

Device: FGH50N3

Equivalent to wafer fab process: IGBT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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