IGBTs | FGH60T65SQD-F155

IGBT、650 V、60 A フィールド・ストップ・トレンチ

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Overview

オン・セミコンダクターの新シリーズのフィールドストップ第 4 世代 IGBT は、新しいフィールドストップ IGBT 技術を用いて、低い伝導損失およびスイッチング損失が必要不可欠なソーラー・インバータ、UPS、溶接機、テレコム、ESS および PFC のアプリケーションに最適な性能を発揮します。

  • Solar Inverter, UPS, Welder, Telecom, ESS, PFC

  • Maximum Junction Temperature: TJ =175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 60 A
  • 100% of the Parts Tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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FGH60T65SQD-F155

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CAD Model

Pb

A

H

P

TO-247-3

340CH

NA

0

TUBE

450

Y

-

650

60

1.6

2.3

0.167

0.585

34.6

~NA~

79

-

-

333

-

$2.3279

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Die Related Summary Data

Device: FGH60T65SQD-F155

Equivalent to wafer fab process: 3B,IJ

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等価デバイス時間

MTBF/MTTF (時間)

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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