IGBTs | FGH80N60FD2

IGBT、600V、フィールドストップ

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Overview

当社のフィールドストップ IGBT は、新しいフィールドストップ IGBT 技術を用いて、低伝導損失およびスイッチング損失が必要不可欠な誘導加熱および PFC のアプリケーションに最適な性能を発揮します。

  • 家電製品

  • 高電流能力
  • 低飽和電圧: VCE(sat) =1.8V @ IC = 40A
  • 高入力インピーダンス
  • 高速スイッチング
  • RoHS対応

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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FGH80N60FD2TU

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Last Shipments

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

40

1.8

1.2

0.52

1

125

4.8

120

-

-

290

Yes

Price N/A

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信頼性データ

Die Related Summary Data

Device: FGH80N60FD2TU

Equivalent to wafer fab process: 3B,IO

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

3B,IO

0

819278237

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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