IGBTs | FGL40N120AND

IGBT、1200V、NPT

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Overview

NPT テクノロジを採用したフェアチャイルドの AN シリーズの IGBT は、伝導損失とスイッチング損失を低減します。AN シリーズは、誘導加熱 (IH)、モータ制御、汎用インバータ、無停電電源装置 (UPS) などのアプリケーションに向けたソリューションとなります。

  • その他の産業用

  • 高速スイッチング
  • 低飽和電圧: VCE(sat) = 2.6 V @ IC = 40A
  • 高入力インピーダンス
  • Co-PAK、FRDを備えたIGBT: trr = 75ns(通常)

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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FGL40N120ANDTU

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CAD Model

Pb

A

H

P

TO-264-3

340CA

NA

0

TUBE

375

N

-

1200

40

2.6

3.2

1.1

2.3

75

8

220

10

-

500

Yes

Price N/A

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信頼性データ

Die Related Summary Data

Device: FGL40N120ANDTU

Equivalent to wafer fab process: 3B,IM

製品技術

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等価デバイス時間

MTBF/MTTF (時間)

FITS

3B,IM

0

975477967

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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