IGBTs | FGY100T65SCDT

IGBT、フィールドストップ・トレンチ、短絡回路定格、650 V、100 A

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Overview

オン・セミコンダクターの新シリーズのフィールドストップ第 3 世代 IGBT は、新しいフィールドストップ IGBT 技術を用いて、低い伝導損失およびスイッチング損失が必要不可欠な太陽光発電、UPS、モータ制御、ESS、HVAC のアプリケーションに最適な性能を提供します。

  • Solar
  • UPS
  • Motor Control
  • ESS
  • HVAC

  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 100 A
  • High Input Impedance
  • Fast Switching
  • Short Circuit Rated 5 us
  • Tighten Parameter Distribution
  • These Devices are Pb−Free and are RoHS Compliant

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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Eon Typ (mJ)

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Irr Typ (A)

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FGY100T65SCDT

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Active

CAD Model

Pb

A

H

P

TO-247-3

340CD

NA

0

TUBE

450

Y

-

650

100

1.5

1.68

5.2

9.7

62

-

157

5

-

750

Yes

$6.128

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Die Related Summary Data

Device: FGY100T65SCDT

Equivalent to wafer fab process: 3B,IJ

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等価デバイス時間

MTBF/MTTF (時間)

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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