IGBTs | HGTG20N60A4

IGBT、600V、SMPS

Obsolete

Datasheet

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Overview

HGTG20N60A4 は、MOSFET の高入力インピーダンスとバイポーラ・トランジスタのオンステートでの低伝導損失の長所を組み合わせています。この IGBT は、高周波で動作するため低伝導損失が不可欠な高電圧スイッチング・アプリケーションの多くに最適です。このデバイスは UPS、溶接、誘導加熱のような高速スイッチング・アプリケーション向けに最適化されています。

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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HGTG20N60A4

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

40

1.8

-

0.15

0.28

-

-

142

-

-

290

No

Price N/A

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信頼性データ

Die Related Summary Data

Device: HGTG20N60A4

Equivalent to wafer fab process: IGBT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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