IGBTs | HGTP10N120BN

1200V、NPT IGBT

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Overview

HGTP10N120BN は非パンチ・スルー (NPT) IGBT 設計に基づいています。IGBT は、UPS、太陽光発電インバータ、モータ制御、電源など、低伝導損失が不可欠な中程度の周波数で動作する多くの高電圧スイッチング・アプリケーションに最適です。

  • 無停電電源装置

  • 17A、1200V、TC = 110°C
  • 低飽和電圧: VCE(sat) = 2.45V @ IC = 10A
  • 通常の立ち下がり時間。 . . . . . . . . .140ns @ TJ = 150°C
  • 短絡回路定格:
  • 低導電損失

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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HGTP10N120BN

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Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

N

-

1200

17

2.45

-

-

-

-

-

-

-

-

-

No

Price N/A

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Die Related Summary Data

Device: HGTP10N120BN

Equivalent to wafer fab process: IGBT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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