IGBTs | NGTB35N65FL2

IGBT、650V 35A FS2 太陽光/UPS

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Overview

この絶縁ゲート・バイポーラ・トランジスタ (IGBT) は堅牢で費用効率が高いフィールドストップ II トレンチ構造が特長であり、要求の厳しいスイッチング・アプリケーションで優れた性能を発揮し、低オン抵抗電圧も最小スイッチング損失も実現します。この IGBT は UPS と太陽光発電のアプリケーションに最適です。低フォワード電圧のソフトで高速な共パッケージ型フリーホイール・ダイオードが内蔵されています。

  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Welding

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µs Short−Circuit Capability

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB35N65FL2WG

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CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

Y

-

650

35

1.7

2.2

0.28

0.84

68

7

125

5

-

300

Yes

$2.4505

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Die Related Summary Data

Device: NGTB35N65FL2WG

Equivalent to wafer fab process: IGN IGBT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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