IGBTs | NGTB40N120L3

IGBT、ウルトラ・フィールド・ストップ - 1200V 40A、低 VCEsat

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Overview

この絶縁ゲート・バイポーラ・トランジスタ (IGBT) は、堅牢で費用効率が高いウルトラ・フィールド・ストップ・トレンチ構造が特長であり、要求の厳しいスイッチング・アプリケーションで優れた性能を発揮、低オン抵抗電圧も最小スイッチング損失も実現します。IGBT はモータ・ドライバ・アプリケーションに最適です。低フォワード電圧のソフトで高速な共パッケージ型還流ダイオードが内蔵されています。

  • Motor Drive Inverter
  • Industrial Switching
  • Welding

  • Industrial

  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for Low VCEsat
  • These are Pb−Free Devices

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB40N120L3WG

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CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

N

-

1200

40

1.55

3

1.5

1.5

86

12

220

-

-

454

Yes

Price N/A

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信頼性データ

Die Related Summary Data

Device: NGTB40N120L3WG

Equivalent to wafer fab process: IGN IGBT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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