IGBTs | NGTB40N120S3

IGBT、1200V、40A、低 VF FSIII

Obsolete

Datasheet

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Overview

この絶縁ゲート・バイポーラ・トランジスタ (IGBT) は堅牢で費用効率が高いウルトラ・フィールドストップ・トレンチ構造が特長であり、要求の厳しいスイッチング・アプリケーションで優れた性能を発揮、低スイッチング損失も実現します。この IGBT は、移相フルブリッジなど低 VF ダイオードの高速スイッチング IGBT を必要とするアプリケーションに最適です。低フォワード電圧の還流ダイオードが内蔵されています。

  • Welding
  • Uninterruptible Power Inverter Supplies (UPS)
  • Motor Control

  • Industrial

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Low VF Reverse Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB40N120S3WG

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Obsolete

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CAD Model

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

N

-

1200

40

1.7

2

1.1

2.2

256

19

212

-

-

454

Yes

Price N/A

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信頼性データ

Die Related Summary Data

Device: NGTB40N120S3WG

Equivalent to wafer fab process: HVFET

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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