IGBTs | NGTB40N65IHL2

IGBT, 650V 40A FS2 Induction Heating

Obsolete

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co−packaged free wheeling diode with a lowforward voltage.

  • Inductive Heating
  • Soft Switching

  • Extremely Efficient Trench with Fieldstop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Optimized for Low Losses in IH Cooker Application
  • TJmax = 175°C
  • Soft, Fast Free Wheeling Diode

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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Irr Typ (A)

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Co-Packaged Diode

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NGTB40N65IHL2WG

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

N

-

650

45

1.8

1.2

0.36

-

465

36

135

-

-

300

Yes

Price N/A

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Die Related Summary Data

Device: NGTB40N65IHL2WG

Equivalent to wafer fab process: IGN IGBT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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