IGBTs | NGTB50N120FL2

IGBT、1200V 50A FS2 太陽光/UPS

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Overview

この絶縁ゲート・バイポーラ・トランジスタ (IGBT) は、堅牢で費用効率が高いフィールド・ストップ II トレンチ構造が特長であり、要求の厳しいスイッチングアプリケーションで優れた性能を発揮し、低オン抵抗電圧も最小スイッチング損失も実現します。IGBT は UPS と太陽光発電のアプリケーションに最適です。低フォワード電圧のソフトで高速な共パッケージ型フリーホイール・ダイオードが内蔵されています。

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 10µs Short Circuit Capability

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Case Outline

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

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EAS Typ (mJ)

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Co-Packaged Diode

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NGTB50N120FL2WG

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Pb

A

H

P

TO-247

NA

0

TUBE

30

N

-

1200

50

2.2

2

1.4

4.4

256

19

311

10

-

535

Yes

Price N/A

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Die Related Summary Data

Device: NGTB50N120FL2WG

Equivalent to wafer fab process: IGN IGBT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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