IGBTs | NGTB50N60L2

IGBT、600V 50A FS2 低 VCEsat

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Overview

この絶縁ゲート・バイポーラ・トランジスタ (IGBT) は堅牢で費用効率が高いフィールドストップ (FS) トレンチ構造が特長であり、要求の厳しいスイッチング・アプリケーションで優れた性能を発揮し、低オン抵抗電圧も最小スイッチング損失も実現します。

  • Motor Drive Inverters
  • Industrial Switching
  • Welding

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5 s Short−Circuit Capability
  • These are Pb−Free Devices

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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NGTB50N60L2WG

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CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

N

-

600

50

1.5

1.7

0.6

0.8

67

7.4

310

5

-

500

Yes

Price N/A

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信頼性データ

Die Related Summary Data

Device: NGTB50N60L2WG

Equivalent to wafer fab process: IGN IGBT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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