IGBTs | NGTB60N60S

IGBT

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Overview

この絶縁ゲート・バイポーラ・トランジスタ (IGBT) は堅牢で費用効率が高いフィールドストップ (FS) トレンチ構造が特長であり、要求の厳しいスイッチング・アプリケーションで優れた性能を発揮し、低オン抵抗電圧も最小スイッチング損失も実現します。この IGBT はハーフブリッジ共振アプリケーションに最適です。低フォワード電圧のソフトで高速な共パッケージ型還流ダイオードが内蔵されています。

  • Welding
  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Low Gate Charge
  • Soft, Fast Free Wheeling Diode

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB60N60SWG

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

340L-02

NA

0

TUBE

30

N

-

600

60

2

1.98

0.6

1.41

76

7

173

-

-

298

Yes

Price N/A

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