IGBTs | PCFG75T120SQF

ウルトラ・フィールドストップ IGBT 1200V 75A ベア・ダイ

Obsolete

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Overview

この絶縁ゲート・バイポーラ・トランジスタ (IGBT) は堅牢で費用効率が高いウルトラ・フィールドストップ・トレンチ構造が特長であり、要求の厳しいスイッチングアプリケーションで優れた性能を発揮、低オン抵抗電圧も最小スイッチング損失も実現します。

  • Solar Inverter
  • UPS

  • Industrial

  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices

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Package Type

Case Outline

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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PCFG75T120SQF

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Obsolete

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Pb

A

H

P

-

-

NA

0

PLRNG

1

N

-

1200

300

1.7

-

-

-

-

-

399

-

-

-

-

Price N/A

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信頼性データ

Die Related Summary Data

Device: PCFG75T120SQF

Equivalent to wafer fab process: HVFET

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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