IGBTs | PCGLA200T75NF8

IGBTベア・ダイ750V 200A

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Overview

750V 200A FS4 Trench IGBTベア・ダイ（ダイ・サイズ10mmx10mm）

  • EV/HEV Traction Modules
  • General Power Modules

  • xEV

  • AEC-Q101 rev. D qualified for enhanced reliability
  • Maximum junction temperature 175°C
  • Positive temperature coefficient
  • Easy paralleling
  • Very low saturation voltage: VCE(SAT) = 1.45 V (Typ.) @ IC = 200 A
  • Short Circuit rated
  • Optimized for motor control applications

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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PCGLA200T75NF8

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CAD Model

Pb

A

H

P

-

-

NA

0

MTFRM

1

N

-

750

200

1.45

-

-

-

-

-

-

4

-

-

-

$6.9398

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信頼性データ

Die Related Summary Data

Device: PCGLA200T75NF8

Equivalent to wafer fab process: IGBT

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等価デバイス時間

MTBF/MTTF (時間)

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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