IGBTs | SGF5N150UF

IGBT、ディスクリート、高性能

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Overview

当社の絶縁ゲート・バイポーラ・トランジスタ (IGBT) は、低い伝導損失とスイッチング損失を提供します。SGF5N150UF はスイッチング電源アプリケーション向けに設計されています。

  • その他の産業用

  • 高速スイッチング
  • 低飽和電圧: V CE(sat) = 4.7 V @ I C = 5A
  • 高入力インピーダンス

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

SGF5N150UFTU

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CAD Model

Pb

A

H

P

TO-3PF-3L

340AH

NA

0

TUBE

360

N

-

1500

10

4.7

-

0.1

0.19

-

-

30

-

-

62.5

No

Price N/A

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信頼性データ

Die Related Summary Data

Device: SGF5N150UFTU

Equivalent to wafer fab process: IGBT

製品技術

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等価デバイス時間

MTBF/MTTF (時間)

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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