IGBTs | SGP23N60UFD

600V、PT IGBT

Obsolete

Datasheet

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Overview

当社の UD シリーズの絶縁ゲート・バイポーラ・トランジスタ (IGBT) は、低い伝導損失とスイッチング損失を提供します。UFD シリーズは、高速スイッチングが必要であるモータ制御や一般的なインバータなどのアプリケーション向けに設計されています。

  • その他の産業用
  • 高速スイッチング
  • 低飽和電圧: V CE(sat) = 2.1 V @ I C = 12A
  • 高入力インピーダンス
  • CO-PAK、FRDを備えたIGBT: rr = 42ns (通常)

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Product services, tools and other useful resources related to SGP23N60UFD

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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SGP23N60UFDTU

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

No

-

600

12

2.1

-

-

-

80

-

-

-

-

-

Yes

Price N/A

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信頼性データ

Die Related Summary Data

Device: SGP23N60UFDTU

Equivalent to wafer fab process: IGBT

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

IGBT

3

4562573939

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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