MOSFETs | FCB260N65S3

パワー MOSFET、N チャネル、SUPERFET® III、Easy Drive、650 V、12 A、260 mΩ、D2PAK

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Overview

SUPERFET III MOSFET は、オン・セミコンダクターの最新の高電圧スーパージャンクション (SJ) MOSFET ファミリであり、電荷バランス技術を活用して優れた低オン抵抗と低ゲート電荷性能を実現します。この先端技術は、伝導損失を最小限に抑え、優れたスイッチング性能を提供、極端な dv/dt レートに対応するよう構成されています。その結果、SUPERFET III MOSFET Easy Drive シリーズは EMI の各種問題の管理に役立ち、設計の実装を容易にします。

  • Computing
  • Consumer
  • Industrial
  • Notebook / Desktop computer / Game console
  • Telecom / Server
  • LCD / LED TV
  • LED Lighting / Ballast
  • Automation
  • Adapter
  • 700 V @ TJ = 150 °C
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
  • Ultra Low Gate Charge (Typ. Qg= 24 nC)
  • Internal Gate resistance: 8.7ohm
  • Optimized Capacitance
  • Typ. RDS(on) = 222 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant
  • Wave soldering guarantee

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCB260N65S3

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

650

260

N-Channel

Single

±30

4.5

12

90

-

-

-

24

1010

$1.3816

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