High Voltage MOSFETs | FCMT080N65S3

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 38 A, 80 mΩ, Power88

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Overview

SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction(SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET III MOSFET is very suitable for the switching power applications such as server/telecom power, adapter and solar inverter applications.The Power88 package is an ultra-slim surface-mount package (1mm high) with a low profile and small footprint (8 * 8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1(MSL 1).

  • Telecommunication
  • Cloud system
  • Industrial

  • Telecom power
  • Server power
  • LED Lighting
  • UPS / Solar

  • 700V @ TJ = 150C
  • Leadless Ultra-thin SMD package
  • Kelvin contact
  • Ulta Low Gate Charge (Typ. Qg = 71 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 570 pF)
  • Optimized Capacitance
  • Typ. RDS(on) = 70 mohm
  • 100% Avalanche Tested
  • RoHS Compliant
  • Moisture Sensitivity Level 1 guarantee
  • Internal Gate Resistance: 0.55 Ω

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCMT080N65S3

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CAD Model

Pb

A

H

P

TDFN4 8.00x8.00x1.00, 2.00P

520AB

1

260

REEL

3000

Y

N-Channel

PowerTrench® T1

Power 88

High Voltage

Standard

0

Single

0

650

80

30

4.5

38

260

~NA~

~NA~

~NA~

71

2765

~NA~

405

65

13

$2.4572

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Die Related Summary Data

Device: FCMT080N65S3

Equivalent to wafer fab process: 3A

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

3A

26

4688824297

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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