MOSFETs | FCP190N60E

パワー MOSFET、N チャネル、SUPERFET® II、Easy Drive、600 V、20.6 A、190 mΩ、TO-220

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Overview

SuperFET® II MOSFET は、最新の高電圧スーパー・ジャンクション (SJ) MOSFET ファミリであり、電荷バランス技術を活用して優れた低オン抵抗と低ゲート電荷性能を実現します。この技術は、伝導損失を最小限に抑え、優れたスイッチング性能、dv/dt レート、およびより高いアバランシェ・エネルギーに対応するよう構成されています。その結果、SuperFET II MOSFET は、PFC、サーバ/テレコム電源、FPD TV 電源、ATX 電源、産業用電源アプリケーションなどのスイッチング電源アプリケーションに非常に適しています。

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  • 650V @TJ = 150°C
  • 最大 RDS(on) = 190mΩ
  • 超少量のゲート電荷 (通常 Qg = 63nC )
  • 低実効出力容量 (通常 Coss.eff = 178pF )
  • 100%電子なだれテスト済み

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCP190N60E

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Active

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

Y

600

190

N-Channel

Single

DC: ±20, AC: ±30

3.5

20.6

208

-

-

-

63

2385

$1.6377

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