Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F Ultra narrow lead

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Overview

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SUPERFET II MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

  • Computing
  • Consumer
  • Industrial
  • Notebook / Desktop computer / Game console
  • Telecom / Server
  • LCD / LED TV
  • LED Lighting / Ballast
  • Adapter
  • Ultra low gate charge ( Typ. Qg = 63nC )
  • 650V @TJ = 150°C
  • Max. RDS(on) = 190mΩ
  • Low effective output capacitance ( Typ. Coss.eff = 178pF )
  • 100% avalanche tested

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FCPF190N60E-F154

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Active

CAD Model

Pb

A

H

P

TO-220 FULLPACK, 3-LEAD (ULTRA NARROW LEAD)

NA

0

TUBE

1000

F

600

190

N-Channel

Single

20

3.5

20.6

39

~NA~

~NA~

~NA~

63

2385

$1.9537

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