High Voltage MOSFETs | FCPF400N60

Power MOSFET、Nチャネル、SUPERFET® II、FAST、600 V、10 A、400 mΩ、TO-220F

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Overview

SuperFET® II MOSFETは、最新の高電圧スーパージャンクション（SJ）MOSFETファミリーであり、電荷バランス技術を活用して優れた低オン抵抗と低ゲート電荷性能を実現します。この技術は、伝導損失を最小限に抑え、優れたスイッチング性能、dv / dtレート、およびより高いアバランシェエネルギーに対応するよう構成されています。その結果、SuperFET II MOSFETは、PFC、サーバー/テレコム電源、FPD TV電源、ATX電源、産業用電源アプリケーションなどのスイッチング電源アプリケーションに非常に適しています。

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  • 650V @TJ = 150°C
  • 最大RDS(on) = 400mΩ
  • 超少量のゲート電荷 (通常 Qg = 28nC )
  • 低実効出力容量 (通常 Coss.eff = 90pF )
  • 100%電子なだれテスト済み

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCPF400N60

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600

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DC: ±20, AC: ±30

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信頼性データ

Die Related Summary Data

Device: FCPF400N60

Equivalent to wafer fab process: 3A

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

3A

26

4688824297

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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