High Voltage MOSFETs | FCPF400N80Z

Power MOSFET、Nチャネル、SUPERFET® II、800 V、14 A、400 mΩ、TO-220F

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Overview

SuperFET® II MOSFETは、最新の高電圧スーパージャンクション（SJ）MOSFETファミリーであり、電荷バランス技術を活用して優れた低オン抵抗と低ゲート電荷性能を実現します。この技術は、伝導損失を最小限に抑え、優れたスイッチング性能、dv / dtレート、およびより高いアバランシェエネルギーに対応するよう構成されています。その結果、SuperFET II MOSFETは、PFC、サーバー/テレコム電源、FPD TV電源、ATX電源、産業用電源アプリケーションなどのスイッチング電源アプリケーションに非常に適しています。

  • 通常 RDS(on) = 340 mΩ
  • 非常に少量のゲート電荷 (通常 Qg = 43 nC)
  • 低実効出力容量 (通常 Cosseff. = 138 pF)
  • 100%電子なだれテスト済み
  • RoHS対応

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCPF400N80Z

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Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

N-Channel

PowerTrench® T1

TO-220FP

High Voltage

Standard

0

Single

0

800

400

DC: ±20, AC: ±30

4.5

11

35.7

-

-

-

43

1770

17

7400

51

0.5

$1.6361

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