MOSFETs | FDB0250N807L

80 V NチャンネルPowerTrench® MOSFET

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Overview

このNチャンネルMOSFETは、産業用アプリケーションに向けて、オン状態抵抗を最小化しつつ優れた堅牢性とスイッチング性能を維持できるよう特別に調整されている、フェアチャイルドセミコンダクター社の高度なPowerTrench® プロセスを使用して生産されます。

  • Industrial Motor Drive
  • Industrial Power Supplies
  • Industrial Automation
  • Battery Protection
  • Uninterruptible Power Supplies
  • Energy Inverters
  • Energy Storage
  • Load Switch
  • Battery Opperated Tools
  • Solar Inverters
  • 最大 rDS(on) = 2.2mΩ @ VGS = 10 V、 ID = 30 A
  • 最大 rDS(on) = 2.7mΩ @ VGS = 8 V、 ID = 27 A
  • 高速スイッチング速度
  • 少量のゲート電荷
  • 超低rDS(on)
    用高性能トレンチ技術
  • 高電力および高電流処理能力
  • RoHS準拠

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDB0250N807L

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Active

CAD Model

Pb

A

H

P

D2PAK-7 / TO-263-7

418AY

1

245

REEL

800

Y

80

2.2

N-Channel

Single

±20

4

240

214

-

-

-

143

11000

$2.3243

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