Low/Medium Voltage MOSFETs | FDB2614

Nチャネル PowerTrench® MOSFET 200V、62A、27mΩ

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Overview

このNチャネルMOSFETは、優れたスイッチング性能を維持しながら、オン抵抗を最小限に抑えるように構成されたPowerTrench®プロセスを使用して製造されます。

  • その他のオーディオ&ビデオ
  • 家電製品

  • RDS(on) = 22.9mΩ (通常) @VGS = 10V、ID = 31A
  • 超低RDS(ON)オンの高性能トレンチ技術
  • 少量のゲート電荷
  • 高電力および電流処理能力

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDB2614

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Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

Y

N-Channel

PowerTrench® T1

D2PAK

Low-Medium Voltage

Standard

0

Single

0

200

27

±30

5

62

260

-

-

-

76

5435

18

810

505

110

$2.2578

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信頼性データ

Die Related Summary Data

Device: FDB2614

Equivalent to wafer fab process: HVFET

製品技術

製品技術

等価デバイス時間

MTBF/MTTF (時間)

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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