MOSFETs | FDC6310P

デュアル P チャネル PowerTrench® MOSFET、2.5V 仕様、-20V、-2.2A、125mΩ

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Overview

これら P チャネル 2.5V 仕様 MOSFET は、優れたスイッチング性能のために低デート電荷を維持しながら、オン抵抗を最小限に抑えるように特別に構成された高度な PowerTrench® プロセスを使用して製造されます。これらのデバイスは、より大規模、より高価な SO-8 および TSSOP-8 パッケージが実用的でないアプリケーション向けに、非常に小さなフットプリントで並外れた消費電力を提供するように設計されています。

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  • -2.2 A、-20 V
  • RDS(on) = 125m Ω @ VGS = -4.5 V
  • RDS(on) = 190m Ω @ VGS = -2.5 V
  • 少量のゲート電荷
  • 高速スイッチング速度。
  • 特に低いRDS(ON)
    用の高性能トレンチ技術
  • SuperSOT™ -6 パッケージ: 標準のSO-8より72%小型、薄型 (厚さ 1 mm)

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC6310P

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

-20

-

P-Channel

Dual

12

-1.5

-2.2

0.96

Q1=Q2=190

Q1=Q2=125

5.4

3.7

337

$0.2105

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