MOSFETs | FDC640P

P チャネル PowerTrench® MOSFET、2.5V 仕様、-20V、-4.5A、53mΩ

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Overview

この P チャネル 2.5V 仕様 MOSFET は、高度な PowerTrench® プロセスの堅牢性に優れたゲート・バージョンを使用します。広範なゲート駆動電圧 (2.5V ～ 12V) で電源管理アプリケーション向けに最適化されています。

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  • -4.5 A、-20 V
    RDS(ON) = 0.053 Ω @ VGS = -4.5 V
    RDS(ON) = 0.080 Ω @ VGS = -2.5 V
  • 強固なゲート定格( ±12V)
  • 高速スイッチング速度。
  • 非常に小さいRDS(ON)
    を実現する高性能なトレン
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDC640P

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Active

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

Y

-20

-

P-Channel

Single

12

-1.5

-4.5

1.6

80

53

-

9

890

$0.1733

More Details

FDC640P-NBAD004A

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Obsolete

CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

-20

-

P-Channel

Single

12

-1.5

-4.5

1.6

80

53

-

9

890

Price N/A

More Details

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